Seminar at the accelerator – Tomás Fernández

Speaker: Tomás Fernández Bouvier, Accelerator Laboratory, University of Helsinki, Finland

Title: Molecular dynamics insights on the molecular P implantation for scalable spin-qubit arrays

Abstract: Future quantum computing technologies require an implantation precision which is higher than any focused ion beam technology currently existing. Towards improving the placement precision of P donors in a Si diamond lattice, the use of a PF2 molecular ion instead of a single atom P ion has significantly improved the detection confidence of the implant while preserving a low straggling in its placement. [1]

Computer simulations using the molecular dynamics method can provide additional details on the process. In my presentation, I will discuss the physics of the energy deposited by molecular ions moving in the material via electronic stopping power and how using a molecule can make the interpretation of the electronic signal difficult as an indication of the donor depth in the lattice. I will present the synergies in energy deposition due to simultaneous impact of three ions during a molecular ion implantation and I will describe in detail the damage caused by the highly energetic molecules in the lattice which is different from the one caused by separate implantation of their atomic components.

[1] Danielle Holmes, Benjamin Wilhelm, Alexander M. Jakob, Xi Yu, Fay E. Hudson, Kohei M. Itoh, Andrew S. Dzurak, David N. Jamieson, and Andrea Morello. Improved placement precision of donor spin qubits in silicon using molecule ion implantation. Advanced Quantum Technologies, n/a(n/a):2300316

 

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