by V. Torres-Costa, F. Pászti, A. Climent-Font, R. J. Martín-Palma and J. M. Martínez-Duart
Abstract:
Porous silicon (PS) has a great potential in optical applications, among others, due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in the field of optoelectronics. In the present work, Rutherford Backscattering Spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks, consisting of alternate low-porosity/high-porosity layers, in order to determine their compositional profile, homogeneity and overall optical behavior. In addition, RBS has been used to determine the porosity profile of this kind of structures. The experimental results show a constant in-depth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity, nor oxidation degree gradient is observed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Reference:
V. Torres-Costa, F. Pászti, A. Climent-Font, R. J. Martín-Palma and J. M. Martínez-Duart, “Porosity profile determination of porous silicon interference filters by RBS”, physica status solidi (c), vol. 2, no. 9, pp. 3208–3212.
Bibtex Entry:
@article{torres-costa_porosity_2005, title = {Porosity profile determination of porous silicon interference filters by {RBS}}, volume = {2}, issn = {1610-1642}, url = {http://onlinelibrary.wiley.com/doi/10.1002/pssc.200461115/abstract}, doi = {10.1002/pssc.200461115}, abstract = {Porous silicon (PS) has a great potential in optical applications, among others, due to its tunable refractive index. In particular, multilayer structures consisting of alternating PS layers with different refractive indexes can be used as interference filters for applications in the field of optoelectronics. In the present work, Rutherford Backscattering Spectroscopy (RBS) measurements and optical characterization have been carried out on PS multilayer stacks, consisting of alternate low-porosity/high-porosity layers, in order to determine their compositional profile, homogeneity and overall optical behavior. In addition, RBS has been used to determine the porosity profile of this kind of structures. The experimental results show a constant in-depth composition among alternate layers, revealing the good homogeneity of the multilayer structures. Neither porosity, nor oxidation degree gradient is observed. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)}, language = {en}, number = {9}, urldate = {2017-07-21}, journal = {physica status solidi (c)}, author = {Torres-Costa, V. and Pászti, F. and Climent-Font, A. and Martín-Palma, R. J. and Martínez-Duart, J. M.}, month = jun, year = {2005}, keywords = {68.37.Hk, 78.40.Fy, 78.40.Pg, 78.55.Mb, 82.80.Yc}, pages = {3208--3212}, file = {Full Text PDF:E:\cmam_papers\files\483\Torres-Costa et al. - 2005 - Porosity profile determination of porous silicon i.pdf:application/pdf;Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\DWXNKK8D\Torres-Costa et al. - 2005 - Porosity profile determination of porous silicon i.pdf:application/pdf;Snapshot:E:\cmam_papers\files\482\abstract.html:text/html;Snapshot:E:\Usuarios\Administrator\Zotero\storage\6L3WRDB5\abstract.html:text/html}, }