The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films

Apr 1, 2022

by R.W. and Plaza J.L. Smith, D. and Sánchez M. Ghita and B.J. and Muñoz-Martín A. García
Reference:
R.W. and Plaza J.L. Smith, D. and Sánchez M. Ghita and B.J. and Muñoz-Martín A. García, “The use of HI-ERDA/RBS and NRA/RBS to depth profile N in GaAs1-xNx thin films”, Hyderabad, India, 2007.
Bibtex Entry:
@misc{smith_rw_use_2007,
	address = {Hyderabad, India},
	type = {Poster contribution},
	title = {The use of {HI}-{ERDA}/{RBS} and {NRA}/{RBS} to depth profile {N} in {GaAs1}-{xNx} thin films},
	author = {{Smith, R.W.} and {Plaza, J.L.} and {Ghita, D.} and {Sánchez, M.} and {García, B.J.} and {Muñoz-Martín, A.} and {Climent-Font, A.}},
	month = sep,
	year = {2007},
}