by A. Rivera, R. Andrzejewski, A. Guirao, R. González-Arrabal, E. Andrzejewska, N. Gordillo, J. E. Prieto and D. O. Boerma
Abstract:
We describe an experimental setup with a unique set of features. It consists of a number of ultra-high vacuum chambers (UHV) connected by transfer rods. It is employed for epitaxial growth of thin films. The surface symmetry of the as-grown samples can be investigated by low energy electron diffraction (LEED) and their composition as well as the atomic positions in external layers can be studied by low energy ion scattering (LEIS) with time-of-flight (TOF). The power of this unique multiple-hit LEIS/TOF equipment is based on the use of a 1D-position sensitive detector. In addition, ions with energies in the MeV range are used to perform Rutherford backscattering with channelling (RBS/channeling) or elastic recoil detection (ERD). Ellipsometry, Kerr effect and resistivity measurements will also be available in situ. The combination of these techniques allows us to extensively characterize grown samples. In addition, high-energy heavy ions are exploited for film modification.
Reference:
A. Rivera, R. Andrzejewski, A. Guirao, R. González-Arrabal, E. Andrzejewska, N. Gordillo, J. E. Prieto and D. O. Boerma, “An experimental setup for growth of thin films and advanced sample analysis coupled to the 5MV tandem accelerator of the Universidad Autónoma de Madrid”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 249, no. 1, pp. 935–938.
Bibtex Entry:
@article{rivera_experimental_2006,
series = {Ion {Beam} {Analysis}},
title = {An experimental setup for growth of thin films and advanced sample analysis coupled to the {5MV} tandem accelerator of the {Universidad} {Autónoma} de {Madrid}},
volume = {249},
issn = {0168-583X},
url = {http://www.sciencedirect.com/science/article/pii/S0168583X06004423},
doi = {10.1016/j.nimb.2006.03.166},
abstract = {We describe an experimental setup with a unique set of features. It consists of a number of ultra-high vacuum chambers (UHV) connected by transfer rods. It is employed for epitaxial growth of thin films. The surface symmetry of the as-grown samples can be investigated by low energy electron diffraction (LEED) and their composition as well as the atomic positions in external layers can be studied by low energy ion scattering (LEIS) with time-of-flight (TOF). The power of this unique multiple-hit LEIS/TOF equipment is based on the use of a 1D-position sensitive detector. In addition, ions with energies in the MeV range are used to perform Rutherford backscattering with channelling (RBS/channeling) or elastic recoil detection (ERD). Ellipsometry, Kerr effect and resistivity measurements will also be available in situ. The combination of these techniques allows us to extensively characterize grown samples. In addition, high-energy heavy ions are exploited for film modification.},
number = {1},
urldate = {2017-07-21},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
author = {Rivera, A. and Andrzejewski, R. and Guirao, A. and González-Arrabal, R. and Andrzejewska, E. and Gordillo, N. and Prieto, J. E. and Boerma, D. O.},
month = aug,
year = {2006},
keywords = {RBS, MBE, TOF, ERDA, LEIS, Surface characterization},
pages = {935--938},
file = {ScienceDirect Snapshot:E:\cmam_papers\files\570\S0168583X06004423.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\YNJSSG2J\S0168583X06004423.html:text/html},
}