by A. Redondo-Cubero, R. Gago, M. F. Romero, A. Jiménez, F. González-Posada, A. F. Braña and E. Muñoz
Abstract:
In this work, hydrogenated silicon nitride (SiNx:Hy) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and x-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH4/N2 and SiH4/NH3) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Reference:
A. Redondo-Cubero, R. Gago, M. F. Romero, A. Jiménez, F. González-Posada, A. F. Braña and E. Muñoz, “Study of SiNx:Hy passivant layers for AlGaN/GaN high electron mobility transistors”, physica status solidi (c), vol. 5, no. 2, pp. 518–521.
Bibtex Entry:
@article{redondo-cubero_study_2008,
title = {Study of {SiNx}:{Hy} passivant layers for {AlGaN}/{GaN} high electron mobility transistors},
volume = {5},
issn = {1610-1642},
shorttitle = {Study of {SiNx}},
url = {http://onlinelibrary.wiley.com/doi/10.1002/pssc.200777473/abstract},
doi = {10.1002/pssc.200777473},
abstract = {In this work, hydrogenated silicon nitride (SiNx:Hy) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and x-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH4/N2 and SiH4/NH3) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)},
language = {en},
number = {2},
urldate = {2017-10-06},
journal = {physica status solidi (c)},
author = {Redondo-Cubero, A. and Gago, R. and Romero, M. F. and Jiménez, A. and González-Posada, F. and Braña, A. F. and Muñoz, E.},
month = feb,
year = {2008},
keywords = {81.05.Ea, 81.15.Gh, 85.30.Tv},
pages = {518--521},
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}