Formation of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN transistors: an ion beam study.

Oct 3, 2023

by A. Redondo-Cubero, M.D. Ynsa, M.F. Romero, L.C. Alves and E. Muñoz
Reference:
A. Redondo-Cubero, M.D. Ynsa, M.F. Romero, L.C. Alves and E. Muñoz, “Formation of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN transistors: an ion beam study.”, Poster contribution, 113th International Conference on Nuclear Microprobe Technology & Applications, Lisboa, Portugal.
Bibtex Entry:
@misc{redondo-cubero_formation_2012,
	address = {113th International Conference on Nuclear Microprobe Technology & Applications, Lisboa, Portugal},
	type = {Poster contribution},
	title = {Formation of {Au}/{Ti}/{Al}/{Ti} ohmic contacts for {AlGaN}/{GaN} transistors: an ion beam study.},
	shorttitle = {({ICNMTA} 2012),},
	author = {Redondo-Cubero, A. and Ynsa, M.D. and Romero, M.F. and Alves, L.C. and Muñoz, E.},
	year = {2012},
}