by A. Redondo-Cubero, M. D. Ynsa, M. F. Romero, L. C. Alves and E. Muñoz
Abstract:
The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30nmtextlessdtextless90nm). After rapid thermal annealing, the Al out-diffusion is induced even for the thickest Ti barrier, accompanied by Au in-diffusion and the oxidation of the surface. Uniform contacts were found only for dtextgreater50nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing.
Reference:
A. Redondo-Cubero, M. D. Ynsa, M. F. Romero, L. C. Alves and E. Muñoz, “Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 306, pp. 212–217.
Bibtex Entry:
@article{redondo-cubero_effect_2013,
	series = {13th {International} {Conference} on {Microprobe} {Technology} and {Applications} ({ICNMTA2012})},
	title = {Effect of rapid thermal annealing on the composition of {Au}/{Ti}/{Al}/{Ti} ohmic contacts for {GaN}-based microdevices},
	volume = {306},
	issn = {0168-583X},
	url = {http://www.sciencedirect.com/science/article/pii/S0168583X12007914},
	doi = {10.1016/j.nimb.2012.12.030},
	abstract = {The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30nm{textless}d{textless}90nm). After rapid thermal annealing, the Al out-diffusion is induced even for the thickest Ti barrier, accompanied by Au in-diffusion and the oxidation of the surface. Uniform contacts were found only for d{textgreater}50nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing.},
	urldate = {2017-08-01},
	journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
	author = {Redondo-Cubero, A. and Ynsa, M. D. and Romero, M. F. and Alves, L. C. and Muñoz, E.},
	month = jul,
	year = {2013},
	keywords = {RBS, PIXE, GaN, Ohmic contacts, Transistors},
	pages = {212--217},
	file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\798\Redondo-Cubero et al. - 2013 - Effect of rapid thermal annealing on the compositi.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\BPKW5374\Redondo-Cubero et al. - 2013 - Effect of rapid thermal annealing on the compositi.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\797\S0168583X12007914.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\94BD7WW4\S0168583X12007914.html:text/html},
}