Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction

by A. Redondo-Cubero, R. Gago, F. González-Posada, U. Kreissig, M. -A. di Forte Poisson, A. F. Braña and E. Muñoz

Abstract:

The Al content in AlxGa1−xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1textlessxtextless0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for xtextgreater0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis.

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Reference:

A. Redondo-Cubero, R. Gago, F. González-Posada, U. Kreissig, M. -A. di Forte Poisson, A. F. Braña and E. Muñoz, “Aluminium incorporation in AlxGa1−xN/GaN heterostructures: A comparative study by ion beam analysis and X-ray diffraction”, Thin Solid Films, vol. 516, no. 23, pp. 8447–8452.

Bibtex Entry:

@article{redondo-cubero_aluminium_2008,
	title = {Aluminium incorporation in {AlxGa1}−{xN}/{GaN} heterostructures: {A} comparative study by ion beam analysis and {X}-ray diffraction},
	volume = {516},
	issn = {0040-6090},
	shorttitle = {Aluminium incorporation in {AlxGa1}−{xN}/{GaN} heterostructures},
	url = {http://www.sciencedirect.com/science/article/pii/S0040609008004549},
	doi = {10.1016/j.tsf.2008.04.069},
	abstract = {The Al content in AlxGa1−xN/GaN heterostructures has been determined by X-ray diffraction (XRD) and contrasted with absolute measurements from ion beam analysis (IBA) methods. For this purpose, samples with 0.1{textless}x{textless}0.3 grown by metal organic chemical vapour deposition on sapphire substrates have been studied. XRD and IBA corroborate the good epitaxial growth of the AlGaN layer, which slightly deteriorates with the incorporation of Al for x{textgreater}0.2. The assessment of Al incorporation by XRD is quite reliable regarding the average value along the sample thickness. However, XRD analysis tends to overestimate the Al fraction at low contents, which is attributed to the presence of strain within the layer. For the highest Al incorporation, IBA detects a certain Al in-depth compositional profile that should be considered for better XRD data analysis.},
	number = {23},
	urldate = {2017-10-06},
	journal = {Thin Solid Films},
	author = {Redondo-Cubero, A. and Gago, R. and González-Posada, F. and Kreissig, U. and di Forte Poisson, M. -A. and Braña, A. F. and Muñoz, E.},
	month = oct,
	year = {2008},
	keywords = {RBS, XRD, ERDA, AlGaN, HEMT},
	pages = {8447--8452},
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}