Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors

by A. and Gago R. Redondo-Cubero, M.F. and Muñoz-Martín A. Romero and A.F. and Muñoz E. Braña

Reference:

A. and Gago R. Redondo-Cubero, M.F. and Muñoz-Martín A. Romero and A.F. and Muñoz E. Braña, “Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors”, Strasbourg, France, 2007.

Bibtex Entry:

@misc{redondo-cubero_a_study_2007,
	address = {Strasbourg, France},
	type = {Poster contribution},
	title = {Study of a-{SiN}:{H} passivant layers for {GaN}-based high electron mobility transistors},
	author = {{Redondo-Cubero, A.} and {Gago, R.} and {Romero, M.F.} and {Muñoz-Martín, A.} and {Braña, A.F.} and {Muñoz, E.}},
	month = jun,
	year = {2007},
}