by A. and Gago R. Redondo-Cubero, M.F. and Muñoz-Martín A. Romero and A.F. and Muñoz E. Braña
Reference:
A. and Gago R. Redondo-Cubero, M.F. and Muñoz-Martín A. Romero and A.F. and Muñoz E. Braña, “Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors”, Strasbourg, France, 2007.
Bibtex Entry:
@misc{redondo-cubero_a_study_2007, address = {Strasbourg, France}, type = {Poster contribution}, title = {Study of a-{SiN}:{H} passivant layers for {GaN}-based high electron mobility transistors}, author = {{Redondo-Cubero, A.} and {Gago, R.} and {Romero, M.F.} and {Muñoz-Martín, A.} and {Braña, A.F.} and {Muñoz, E.}}, month = jun, year = {2007}, }