Ion beam analysis of ternary and quaternary AlxInyGa1-x-yN/GaN heterostructures for high power electronic devices

by A. and Gago R. Redondo-Cubero, F. and Fernández-Garrido S. González-Posada, A. and Braña A.F. Muñoz-Martín and U. and Grambole D. Kreissig

Reference:

A. and Gago R. Redondo-Cubero, F. and Fernández-Garrido S. González-Posada, A. and Braña A.F. Muñoz-Martín and U. and Grambole D. Kreissig, “Ion beam analysis of ternary and quaternary AlxInyGa1-x-yN/GaN heterostructures for high power electronic devices”, Strasbourg, France, 2007.

Bibtex Entry:

@misc{redondo-cubero_a_ion_2007,
	address = {Strasbourg, France},
	type = {Oral {Contribution}},
	title = {Ion beam analysis of ternary and quaternary {AlxInyGa1}-x-{yN}/{GaN} heterostructures for high power electronic devices},
	author = {{Redondo-Cubero, A.} and {Gago, R.} and {González-Posada, F.} and {Fernández-Garrido, S.} and {Muñoz-Martín, A.} and {Braña, A.F.} and {Kreissig, U.} and {Grambole, D.} and {Muñoz, E.}},
	month = jun,
	year = {2007},
}