by A. and Lorenz K. Redondo-Cubero, N. and Fernández-Garrido S. Franco, R. and Smulders P.J.M. Gago and E. and Calleja E. Muñoz
Reference:
A. and Lorenz K. Redondo-Cubero, N. and Fernández-Garrido S. Franco, R. and Smulders P.J.M. Gago and E. and Calleja E. Muñoz, “Accurate measurement of strain in semiconductor heterostructures by high-energy ion channeling: the influence of steering effects”, Cambridge, U.K.,, 2009.
Bibtex Entry:
@misc{redondo-cubero_a_accurate_2009,
address = {Cambridge, U.K.,},
type = {Oral {Contribution}},
title = {Accurate measurement of strain in semiconductor heterostructures by high-energy ion channeling: the influence of steering effects},
author = {{Redondo-Cubero, A.} and {Lorenz, K.} and {Franco, N.} and {Fernández-Garrido, S.} and {Gago, R.} and {Smulders, P.J.M.} and {Muñoz, E.} and {Calleja, E.} and {Watson, I.W.}},
month = sep,
year = {2009},
}