by P. Prieto, J.F. Marco, J.E. Prieto, S. Ruiz-Gomez, L. Perez, R.P. del Real, M. Vázquez and J. de la Figuera
Abstract:
Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets. © 2017 Elsevier B.V.
Reference:
P. Prieto, J.F. Marco, J.E. Prieto, S. Ruiz-Gomez, L. Perez, R.P. del Real, M. Vázquez and J. de la Figuera, “Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers”, Applied Surface Science, vol. 436, pp. 1067–1074.
Bibtex Entry:
@article{prieto_epitaxial_2018,
title = {Epitaxial integration of {CoFe2O4} thin films on {Si} (001) surfaces using {TiN} buffer layers},
volume = {436},
doi = {10.1016/j.apsusc.2017.12.111},
abstract = {Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets. © 2017 Elsevier B.V.},
journal = {Applied Surface Science},
author = {Prieto, P. and Marco, J.F. and Prieto, J.E. and Ruiz-Gomez, S. and Perez, L. and del Real, R.P. and Vázquez, M. and de la Figuera, J.},
year = {2018},
keywords = {Magnetic anisotropy, Cobalt ferrite, Epitaxial thin films, Silicon device integration},
pages = {1067--1074},
file = {Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers - ScienceDirect:E:\cmam_papers\files\1715\S0169433217336991.html:text/html;Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers - ScienceDirect:E:\Usuarios\Administrator\Zotero\storage\GQ6IYU5V\S0169433217336991.html:text/html;Submitted Version:E:\cmam_papers\files\1696\Prieto et al. - 2018 - Epitaxial integration of CoFe2O4 thin films on Si .pdf:application/pdf;Submitted Version:E:\Usuarios\Administrator\Zotero\storage\2CRP7CJR\Prieto et al. - 2018 - Epitaxial integration of CoFe2O4 thin films on Si .pdf:application/pdf},
}