by J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L. J. Brillson
Abstract:
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.
Reference:
J. Perkins, G. M. Foster, M. Myer, S. Mehra, J. M. Chauveau, A. Hierro, A. Redondo-Cubero, W. Windl and L. J. Brillson, “Impact of Mg content on native point defects in MgxZn1−xO (0 ≤ x ≤ 0.56)”, APL Materials, vol. 3, no. 6, pp. 062801.
Bibtex Entry:
@article{perkins_impact_2015,
	title = {Impact of {Mg} content on native point defects in {MgxZn1}−{xO} (0 ≤ x ≤ 0.56)},
	volume = {3},
	url = {http://aip.scitation.org/doi/10.1063/1.4915491},
	doi = {10.1063/1.4915491},
	abstract = {We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar MgxZn1−xO alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.},
	number = {6},
	urldate = {2017-10-24},
	journal = {APL Materials},
	author = {Perkins, J. and Foster, G. M. and Myer, M. and Mehra, S. and Chauveau, J. M. and Hierro, A. and Redondo-Cubero, A. and Windl, W. and Brillson, L. J.},
	month = mar,
	year = {2015},
	pages = {062801},
	file = {Full Text PDF:E:\cmam_papers\files\1437\Perkins et al. - 2015 - Impact of Mg content on native point defects in Mg.pdf:application/pdf;Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\GMKJZAJ2\Perkins et al. - 2015 - Impact of Mg content on native point defects in Mg.pdf:application/pdf;Snapshot:E:\cmam_papers\files\1438\1.html:text/html;Snapshot:E:\Usuarios\Administrator\Zotero\storage\Q55EE2KP\1.html:text/html},
}