by Ghita P., J. Plaza, Sánchez M. and García B.J.
Reference:
Ghita P., J. Plaza, Sánchez M. and García B.J., “Growth rate and mole fraction dependence on temperature during growth of Ga1-xInxAs by chemical beam epitaxy using triethylgallium, trimethylindium and tertiarybutilarsine”, Poster contribution, 15th European Molecular Beam Epitaxy Workshop, Zacopane, Poland.
Bibtex Entry:
@misc{p_growth_2009,
address = {15th European Molecular Beam Epitaxy Workshop, Zacopane, Poland},
type = {Poster contribution},
title = {Growth rate and mole fraction dependence on temperature during growth of {Ga1}-{xInxAs} by chemical beam epitaxy using triethylgallium, trimethylindium and tertiarybutilarsine},
shorttitle = {({EuroMEB09})},
author = {P., , Ghita and Plaza,, J. and M., , Sánchez and B.J., , García},
month = mar,
year = {2009},
}