by C. E. Osornio-Martinez, D. B. Bonneville, I. Hegeman, M. Dijkstra, Q. Segondat, R. Dekker and S. M. García-Blanco
Abstract:
We demonstrated the monolithic integration of a polycrystalline Al2O3:Er3+ waveguide amplifier onto the passive Si3N4 TriPleX platform, enabling high-performance on-chip amplification for photonic integrated circuits. The polycrystalline Al2O3:Er3+ was deposited using reactive magnetron co-sputtering, ensuring compatibility with large-scale fabrication. On-chip wavelength division multiplexers, based on directional couplers, enabled the combining and splitting of the pump and signal powers on-chip. The 30 cm long waveguide amplifier, with a concentration of 1.6 × 1020 ions/cm3, was bidirectionally pumped at 1480 nm. The integrated amplifier demonstrated a small-signal net gain exceeding 16 dB with a noise figure of approximately 3 dB and a broad gain bandwidth of 80 nm. These results mark a significant step toward fully integrated rare-earth-ion-doped amplifiers for the next-generation of active-passive photonic integrated circuits compatible with silicon photonics platforms.
Reference:
C. E. Osornio-Martinez, D. B. Bonneville, I. Hegeman, M. Dijkstra, Q. Segondat, R. Dekker and S. M. García-Blanco, “Monolithically integrated erbium-doped polycrystalline Al$_{textrm{2}}$O$_{textrm{3}}$ waveguide amplifier on silicon photonics platform”, Optics Express, vol. 33, no. 11, pp. 23491–23502.
Bibtex Entry:
@article{osornio-martinez_monolithically_2025,
title = {Monolithically integrated erbium-doped polycrystalline {Al}$_{textrm{2}}${O}$_{textrm{3}}$ waveguide amplifier on silicon photonics platform},
volume = {33},
copyright = {© 2025 Optica Publishing Group},
issn = {1094-4087},
url = {https://opg.optica.org/oe/abstract.cfm?uri=oe-33-11-23491},
doi = {10.1364/OE.562888},
abstract = {We demonstrated the monolithic integration of a polycrystalline Al2O3:Er3+ waveguide amplifier onto the passive Si3N4 TriPleX platform, enabling high-performance on-chip amplification for photonic integrated circuits. The polycrystalline Al2O3:Er3+ was deposited using reactive magnetron co-sputtering, ensuring compatibility with large-scale fabrication. On-chip wavelength division multiplexers, based on directional couplers, enabled the combining and splitting of the pump and signal powers on-chip. The 30 cm long waveguide amplifier, with a concentration of 1.6 × 1020 ions/cm3, was bidirectionally pumped at 1480 nm. The integrated amplifier demonstrated a small-signal net gain exceeding 16 dB with a noise figure of approximately 3 dB and a broad gain bandwidth of 80 nm. These results mark a significant step toward fully integrated rare-earth-ion-doped amplifiers for the next-generation of active-passive photonic integrated circuits compatible with silicon photonics platforms.},
language = {EN},
number = {11},
urldate = {2025-11-25},
journal = {Optics Express},
author = {Osornio-Martinez, C. E. and Bonneville, D. B. and Hegeman, I. and Dijkstra, M. and Segondat, Q. and Dekker, R. and García-Blanco, S. M.},
month = jun,
year = {2025},
keywords = {Optical amplifiers, Semiconductor optical amplifiers, Frequency combs, Integrated photonics, Microwave photonics, Silicon photonics},
pages = {23491--23502},
file = {PDF:E:\Usuarios\Administrator\Zotero\storage\MW6KU29C\Osornio-Martinez et al. - 2025 - Monolithically integrated erbium-doped polycrystalline Al2O3 waveguide amplifi.pdf:application/pdf},
}