by C. A. Merchant, P. Scrutton, S. Garcia-Blanco, C. Hnatovsky, R. S. Taylor, A. Garcia-Navarro, G. Garcia, F. Agullo-Lopez, J. Olivares, A. S. Helmy and J. S. Aitchison
Abstract:
We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO4)2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution microreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO4)2 in integrated Raman-active devices.
Reference:
C. A. Merchant, P. Scrutton, S. Garcia-Blanco, C. Hnatovsky, R. S. Taylor, A. Garcia-Navarro, G. Garcia, F. Agullo-Lopez, J. Olivares, A. S. Helmy and J. S. Aitchison, “High-Resolution Refractive Index and Micro-Raman Spectroscopy of Planar Waveguides in KGd(WO4) 2 Formed by Swift Heavy Ion Irradiation”, IEEE Journal of Quantum Electronics, vol. 45, no. 4, pp. 373–379.
Bibtex Entry:
@article{merchant_high-resolution_2009,
title = {High-{Resolution} {Refractive} {Index} and {Micro}-{Raman} {Spectroscopy} of {Planar} {Waveguides} in {KGd}({WO4}) 2 {Formed} by {Swift} {Heavy} {Ion} {Irradiation}},
volume = {45},
issn = {0018-9197},
doi = {10.1109/JQE.2009.2013216},
abstract = {We report on the characterization of planar waveguides formed in the Raman-active crystal KGd(WO4)2 using swift carbon, fluorine, and oxygen ion irradiation. The characterization of the waveguiding regions was performed using high-resolution microreflectivity and micro-Raman spectroscopy. The high-resolution microreflectivity measurement fully characterizes the refractive index profile of the barrier formed by amorphization of the crystal and detects other index variations not detected by the m-line technique. Raman spectroscopy measurements reveal details of the Raman properties of the crystal in the waveguiding region in relation to the rest of the sample for the different ion irradiations. Both of these measurement techniques are shown to be important for use of KGd(WO4)2 in integrated Raman-active devices.},
number = {4},
journal = {IEEE Journal of Quantum Electronics},
author = {Merchant, C. A. and Scrutton, P. and Garcia-Blanco, S. and Hnatovsky, C. and Taylor, R. S. and Garcia-Navarro, A. and Garcia, G. and Agullo-Lopez, F. and Olivares, J. and Helmy, A. S. and Aitchison, J. S.},
month = apr,
year = {2009},
keywords = {refractive index, Optical waveguides, Crystals, Optical refraction, Optical variables control, Refractive index, Raman spectroscopy, planar waveguides, amorphization, Crystalline materials, high resolution microreflectivity, high resolution refractive index, KGd(WO4)2, Laser crystals, micro Raman spectroscopy, microreflectivity, optical planar waveguides, Planar waveguides, Raman scattering, Spectroscopy, swift heavy ion irradiation, Waveguide lasers},
pages = {373--379},
file = {IEEE Xplore Abstract Record:E:\cmam_papers\files\1014\4803869.html:text/html;IEEE Xplore Abstract Record:E:\Usuarios\Administrator\Zotero\storage\2H4S665S\4803869.html:text/html;IEEE Xplore Full Text PDF:E:\cmam_papers\files\1013\Merchant et al. - 2009 - High-Resolution Refractive Index and Micro-Raman S.pdf:application/pdf;IEEE Xplore Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\WEXMSF25\Merchant et al. - 2009 - High-Resolution Refractive Index and Micro-Raman S.pdf:application/pdf},
}