by Piedad Martin, David Jimenez-Rey, Rafael Vila, Fernando Sánchez and Rafael Saavedra
Abstract:
Three types of fused silica with different OH and impurity content (KU1, KS-4V and Infrasil 301) have been irradiated with high energy ions: Si4+ (24.37MeV), O4+ (13.5MeV) and He+ (2.46MeV), at different fluences (from 5×1012 to 1.6×1015 ions/cm2). After ion implantation the optical absorption of the samples was measured at room temperature from vacuum ultraviolet (VUV) to near infrared (NIR). A saturation of the absorption spectra was observed in the samples implanted with Si and O when fluence increases, which indicates a defect density saturation with the ion fluence. A surface cracking was observed in all samples irradiated with Si and O ions at fluences (ion beam shutdown) corresponding to energy densities of irradiation between 1023eV/cm3 and 1024eV/cm3. No macroscopic cracks were detected at fluences for which an optical absorption saturation was reached.
Reference:
Piedad Martin, David Jimenez-Rey, Rafael Vila, Fernando Sánchez and Rafael Saavedra, “Optical absorption defects created in SiO2 by Si, O and He ion irradiation”, Fusion Engineering and Design, vol. 89, no. 7, pp. 1679–1683.
Bibtex Entry:
@article{martin_optical_2014,
series = {Proceedings of the 11th {International} {Symposium} on {Fusion} {Nuclear} {Technology}-11 ({ISFNT}-11) {Barcelona}, {Spain}, 15-20 {September}, 2013},
title = {Optical absorption defects created in {SiO2} by {Si}, {O} and {He} ion irradiation},
volume = {89},
issn = {0920-3796},
url = {http://www.sciencedirect.com/science/article/pii/S0920379614001380},
doi = {10.1016/j.fusengdes.2014.02.041},
abstract = {Three types of fused silica with different OH and impurity content (KU1, KS-4V and Infrasil 301) have been irradiated with high energy ions: Si4+ (24.37MeV), O4+ (13.5MeV) and He+ (2.46MeV), at different fluences (from 5×1012 to 1.6×1015 ions/cm2). After ion implantation the optical absorption of the samples was measured at room temperature from vacuum ultraviolet (VUV) to near infrared (NIR). A saturation of the absorption spectra was observed in the samples implanted with Si and O when fluence increases, which indicates a defect density saturation with the ion fluence. A surface cracking was observed in all samples irradiated with Si and O ions at fluences (ion beam shutdown) corresponding to energy densities of irradiation between 1023eV/cm3 and 1024eV/cm3. No macroscopic cracks were detected at fluences for which an optical absorption saturation was reached.},
number = {7},
urldate = {2017-10-23},
journal = {Fusion Engineering and Design},
author = {Martin, Piedad and Jimenez-Rey, David and Vila, Rafael and Sánchez, Fernando and Saavedra, Rafael},
month = oct,
year = {2014},
keywords = {Ion irradiation, Formation of cracks, Optical absorption, Point defects, Silica glass},
pages = {1679--1683},
file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\1278\Martin et al. - 2014 - Optical absorption defects created in SiO2 by Si, .pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\FYYE67XD\Martin et al. - 2014 - Optical absorption defects created in SiO2 by Si, .pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\1276\S0920379614001380.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\LZA3YMI9\S0920379614001380.html:text/html},
}