by M. Manso Silvan, M. Langlet, J. M. Martínez Duart and P. Herrero
Abstract:
A modified process has been applied to a series of thin film structures for their cross-section observation in the transmission electron microscope. The method implies several initial steps such as slicing the structures, framing and hardening before mechanical thinning and the final step of ion beam milling. The low incident angle, low current and acceleration potential in combination with the protective Ti frame allow the lowest damage at the interface. We show two examples: (a) ion processed metal-semiconductor interfaces (Ti/Si) generally subject to amorphization or binary phase formation and (b) bioceramic hydroxyapatite films suffering intense lattice degradation in phosphate and hydroxyl sites. The images obtained show wide crystalline Ti/Si interfaces and polycrystalline HAP structures thus supporting the appropriateness of this methodology.
Reference:
M. Manso Silvan, M. Langlet, J. M. Martínez Duart and P. Herrero, “Preparation of interfaces for TEM cross-section observation”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 257, no. 1, pp. 623–626.
Bibtex Entry:
@article{manso_silvan_preparation_2007,
series = {Ion {Beam} {Modification} of {Materials}},
title = {Preparation of interfaces for {TEM} cross-section observation},
volume = {257},
issn = {0168-583X},
url = {http://www.sciencedirect.com/science/article/pii/S0168583X07001061},
doi = {10.1016/j.nimb.2007.01.262},
abstract = {A modified process has been applied to a series of thin film structures for their cross-section observation in the transmission electron microscope. The method implies several initial steps such as slicing the structures, framing and hardening before mechanical thinning and the final step of ion beam milling. The low incident angle, low current and acceleration potential in combination with the protective Ti frame allow the lowest damage at the interface. We show two examples: (a) ion processed metal-semiconductor interfaces (Ti/Si) generally subject to amorphization or binary phase formation and (b) bioceramic hydroxyapatite films suffering intense lattice degradation in phosphate and hydroxyl sites. The images obtained show wide crystalline Ti/Si interfaces and polycrystalline HAP structures thus supporting the appropriateness of this methodology.},
number = {1},
urldate = {2017-07-21},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
author = {Manso Silvan, M. and Langlet, M. and Martínez Duart, J. M. and Herrero, P.},
month = apr,
year = {2007},
keywords = {Hydroyxapatite, Ion beam milling, Ti/Si, XTEM},
pages = {623--626},
file = {ScienceDirect Snapshot:E:\cmam_papers\files\629\S0168583X07001061.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\YK3HWPL5\S0168583X07001061.html:text/html},
}