by H. D. Liang, Z. Y. Dang, J. F. Wu, J. A. van Kan, S. Qureshi, M. D. Ynsa, V. Torres-Costa, A. Maira, T. V. Venkatesan and M. B. H. Breese
Abstract:
We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100μm deep or 100nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.
Reference:
H. D. Liang, Z. Y. Dang, J. F. Wu, J. A. van Kan, S. Qureshi, M. D. Ynsa, V. Torres-Costa, A. Maira, T. V. Venkatesan and M. B. H. Breese, “High aspect ratio channels in glass and porous silicon”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 394, pp. 1–5.
Bibtex Entry:
@article{liang_high_2017,
title = {High aspect ratio channels in glass and porous silicon},
volume = {394},
issn = {0168-583X},
url = {http://www.sciencedirect.com/science/article/pii/S0168583X16305596},
doi = {10.1016/j.nimb.2016.12.025},
abstract = {We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100μm deep or 100nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.},
urldate = {2017-08-01},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
author = {Liang, H. D. and Dang, Z. Y. and Wu, J. F. and van Kan, J. A. and Qureshi, S. and Ynsa, M. D. and Torres-Costa, V. and Maira, A. and Venkatesan, T. V. and Breese, M. B. H.},
month = mar,
year = {2017},
keywords = {High-aspect-ratio channel, Porous silicon, Proton beam irradiation},
pages = {1--5},
file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\747\Liang et al. - 2017 - High aspect ratio channels in glass and porous sil.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\MR952EY5\Liang et al. - 2017 - High aspect ratio channels in glass and porous sil.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\746\S0168583X16305596.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\7C5NCJE6\S0168583X16305596.html:text/html},
}