by R. J. Jiménez-Riobóo, N. Gordillo, A. de Andrés, A. Redondo-Cubero, M. Moratalla, M. A. Ramos and M. D. Ynsa
Abstract:
Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivity.
Reference:
R. J. Jiménez-Riobóo, N. Gordillo, A. de Andrés, A. Redondo-Cubero, M. Moratalla, M. A. Ramos and M. D. Ynsa, “Boron-doped diamond by 9 MeV microbeam implantation: Damage and recovery”, Carbon, vol. 208, pp. 421–431.
Bibtex Entry:
@article{jimenez-rioboo_boron-doped_2023,
title = {Boron-doped diamond by 9 {MeV} microbeam implantation: {Damage} and recovery},
volume = {208},
issn = {0008-6223},
shorttitle = {Boron-doped diamond by 9 {MeV} microbeam implantation},
url = {https://www.sciencedirect.com/science/article/pii/S0008622323002336},
doi = {10.1016/j.carbon.2023.04.004},
abstract = {Diamond properties can be tuned by doping and ion-beam irradiation is one of the most powerful techniques to do it in a controlled way, but it also produces damage and other aftereffects. Of particular interest is boron doping which, in moderate concentrations, causes diamond to become a p-type semiconductor and, at higher boron concentrations, a superconductor. Nevertheless, the preparation of superconducting boron-doped diamond by ion implantation is hampered by amorphization and subsequent graphitization after annealing. The aim of this work was to explore the possibility of creating boron-doped diamond superconducting regions and to provide a new perspective on the damage induced in diamond by MeV ion irradiation. Thus, a comprehensive analysis of the damage and eventual recovery of diamond when irradiated with 9 MeV B ions with different fluences has been carried out, combining Raman, photoluminescence, electrical resistivity, X-ray diffraction and Rutherford Backscattering/Ion-channeling. It is found that, as the B fluence increases, carbon migrates to interstitial sites outside of the implantation path and an amorphous fraction increases within the path. For low fluences (∼1015 ions/cm2), annealing at 1000 °C is capable to fully recovering the diamond structure without graphitization. However, for higher fluences (≥5 × 1016 ions/cm2), those required for superconductivity, the recovery is important, but some disorder still remains. For high fluences, annealing at 1200 °C is detrimental for the diamond lattice and graphite traces appear. The incomplete healing of the diamond lattice and the interstitial location of B can explain that optimally doped samples do not exhibit superconductivity.},
language = {en},
urldate = {2023-05-11},
journal = {Carbon},
author = {Jiménez-Riobóo, R. J. and Gordillo, N. and de Andrés, A. and Redondo-Cubero, A. and Moratalla, M. and Ramos, M. A. and Ynsa, M. D.},
month = may,
year = {2023},
keywords = {Diamond crystal, Raman spectroscopy, Ion beam modification of materials, Boron-doped diamond, Damage recovery, Ion-beam irradiation},
pages = {421--431},
file = {ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\SJ5TEHPV\Jiménez-Riobóo et al. - 2023 - Boron-doped diamond by 9 MeV microbeam implantatio.pdf:application/pdf;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\Q492MLC7\S0008622323002336.html:text/html},
}