by D. Jimenez-Rey, O. Peña-Rodríguez, J. Manzano-Santamaría, J. Olivares, A. Muñoz-Martin, A. Rivera and F. Agulló-López
Abstract:
Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10MeV and Br at 15MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power Se is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9eV (652nm) and 2.7eV (459nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation.
Reference:
D. Jimenez-Rey, O. Peña-Rodríguez, J. Manzano-Santamaría, J. Olivares, A. Muñoz-Martin, A. Rivera and F. Agulló-López, “Ionoluminescence induced by swift heavy ions in silica and quartz: A comparative analysis”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 286, no. Supplement C, pp. 282–286.
Bibtex Entry:
@article{jimenez-rey_ionoluminescence_2012,
series = {Proceedings of the {Sixteenth} {International} {Conference} on {Radiation} {Effects} in {Insulators} ({REI})},
title = {Ionoluminescence induced by swift heavy ions in silica and quartz: {A} comparative analysis},
volume = {286},
issn = {0168-583X},
shorttitle = {Ionoluminescence induced by swift heavy ions in silica and quartz},
url = {http://www.sciencedirect.com/science/article/pii/S0168583X11011414},
doi = {10.1016/j.nimb.2011.12.025},
abstract = {Ionoluminescence (IL) of the two SiO2 phases, amorphous silica and crystalline quartz, has been comparatively investigated in this work, in order to learn about the structural defects generated by means of ion irradiation and the role of crystalline order on the damage processes. Irradiations have been performed with Cl at 10MeV and Br at 15MeV, corresponding to the electronic stopping regime (i.e., where the electronic stopping power Se is dominant) and well above the amorphization threshold. The light-emission kinetics for the two main emission bands, located at 1.9eV (652nm) and 2.7eV (459nm), has been measured under the same ion irradiation conditions as a function of fluence for both, silica and quartz. The role of electronic stopping power has been also investigated and discussed within current views for electronic damage. Our experiments provide a rich phenomenological background that should help to elucidate the mechanisms responsible for light emission and defect creation.},
number = {Supplement C},
urldate = {2017-10-10},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
author = {Jimenez-Rey, D. and Peña-Rodríguez, O. and Manzano-Santamaría, J. and Olivares, J. and Muñoz-Martin, A. and Rivera, A. and Agulló-López, F.},
month = sep,
year = {2012},
keywords = {Silica, Ion irradiation, Ion damage, Swift heavy ions, Quartz, SiO},
pages = {282--286},
file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\1180\Jimenez-Rey et al. - 2012 - Ionoluminescence induced by swift heavy ions in si.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\LZFW6BG6\Jimenez-Rey et al. - 2012 - Ionoluminescence induced by swift heavy ions in si.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\1177\S0168583X11011414.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\ICMAEI3R\S0168583X11011414.html:text/html},
}