by N. Gordillo, R. Gonzalez-Arrabal, P. Diaz-Chao, J. R. Ares, I. J. Ferrer, F. Yndurain and F. Agulló-López
Abstract:
The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26±2 to 33±2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from −5 to −50μV/K in the Seebeck coefficient and to large enhancements, from 10−3 up to 10Ωcm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.
Reference:
N. Gordillo, R. Gonzalez-Arrabal, P. Diaz-Chao, J. R. Ares, I. J. Ferrer, F. Yndurain and F. Agulló-López, “Electronic structure of copper nitrides as a function of nitrogen content”, Thin Solid Films, vol. 531, pp. 588–591.
Bibtex Entry:
@article{gordillo_electronic_2013,
	title = {Electronic structure of copper nitrides as a function of nitrogen content},
	volume = {531},
	issn = {0040-6090},
	url = {http://www.sciencedirect.com/science/article/pii/S0040609013001491},
	doi = {10.1016/j.tsf.2013.01.030},
	abstract = {The nitrogen content dependence of the electronic properties for copper nitride thin films with an atomic percentage of nitrogen ranging from 26±2 to 33±2 have been studied by means of optical (spectroscopic ellipsometry), thermoelectric (Seebeck), and electrical resistivity measurements. The optical spectra are consistent with direct optical transitions corresponding to the stoichiometric semiconductor Cu3N plus a free-carrier contribution, essentially independent of temperature, which can be tuned in accordance with the N-excess. Deviation of the N content from stoichiometry drives to significant decreases from −5 to −50μV/K in the Seebeck coefficient and to large enhancements, from 10−3 up to 10Ωcm, in the electrical resistivity. Band structure and density of states calculations have been carried out on the basis of the density functional theory to account for the experimental results.},
	urldate = {2017-08-01},
	journal = {Thin Solid Films},
	author = {Gordillo, N. and Gonzalez-Arrabal, R. and Diaz-Chao, P. and Ares, J. R. and Ferrer, I. J. and Yndurain, F. and Agulló-López, F.},
	month = mar,
	year = {2013},
	keywords = {Copper nitride, Density functional theory, Electronic structure, Sebeeck coefficient},
	pages = {588--591},
	file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\783\Gordillo et al. - 2013 - Electronic structure of copper nitrides as a funct.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\FZGSQKS4\Gordillo et al. - 2013 - Electronic structure of copper nitrides as a funct.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\782\S0040609013001491.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\6RQSFY2X\S0040609013001491.html:text/html},
}