by N. Gordillo, R. Gonzalez-Arrabal, M. S. Martin-Gonzalez, J. Olivares, A. Rivera, F. Briones, F. Agulló-López and D. O. Boerma
Abstract:
(N-rich) Cu3N polycrystalline films were deposited by DC triode sputtering from a copper target in a mixture of argon and nitrogen atmosphere. Their chemical composition, structure and electrical properties have been studied as a function of deposition parameters: nitrogen partial pressure (PN2) and DC bias. Depending on PN2 and DC bias, the atomic nitrogen incorporated into the layers ranges from 26at% to a limit value of 33at% as measured by ion beam analysis (IBA) techniques. X-ray diffraction (XRD) data show that most of the layers are single phase, polycrystalline and with preferential 〈100〉 orientation. Optical and electrical measurements indicate that all layers present intrinsic semiconductor behavior with a thermal gap around 0.21–0.25eV and a direct optical gap between 1.5 and 1.7eV. The physical properties observed for these films are discussed in relation to nitrogen contents and sputtering parameters.
Reference:
N. Gordillo, R. Gonzalez-Arrabal, M. S. Martin-Gonzalez, J. Olivares, A. Rivera, F. Briones, F. Agulló-López and D. O. Boerma, “DC triode sputtering deposition and characterization of N-rich copper nitride thin films: Role of chemical composition”, Journal of Crystal Growth, vol. 310, no. 19, pp. 4362–4367.
Bibtex Entry:
@article{gordillo_dc_2008,
title = {{DC} triode sputtering deposition and characterization of {N}-rich copper nitride thin films: {Role} of chemical composition},
volume = {310},
issn = {0022-0248},
shorttitle = {{DC} triode sputtering deposition and characterization of {N}-rich copper nitride thin films},
url = {http://www.sciencedirect.com/science/article/pii/S0022024808006416},
doi = {10.1016/j.jcrysgro.2008.07.051},
abstract = {(N-rich) Cu3N polycrystalline films were deposited by DC triode sputtering from a copper target in a mixture of argon and nitrogen atmosphere. Their chemical composition, structure and electrical properties have been studied as a function of deposition parameters: nitrogen partial pressure (PN2) and DC bias. Depending on PN2 and DC bias, the atomic nitrogen incorporated into the layers ranges from 26at% to a limit value of 33at% as measured by ion beam analysis (IBA) techniques. X-ray diffraction (XRD) data show that most of the layers are single phase, polycrystalline and with preferential 〈100〉 orientation. Optical and electrical measurements indicate that all layers present intrinsic semiconductor behavior with a thermal gap around 0.21–0.25eV and a direct optical gap between 1.5 and 1.7eV. The physical properties observed for these films are discussed in relation to nitrogen contents and sputtering parameters.},
number = {19},
urldate = {2017-10-06},
journal = {Journal of Crystal Growth},
author = {Gordillo, N. and Gonzalez-Arrabal, R. and Martin-Gonzalez, M. S. and Olivares, J. and Rivera, A. and Briones, F. and Agulló-López, F. and Boerma, D. O.},
month = sep,
year = {2008},
keywords = {A1. Optical properties, A1. X-ray diffraction, B1. Nitrides, B2. Semiconducting materials},
pages = {4362--4367},
file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\914\Gordillo et al. - 2008 - DC triode sputtering deposition and characterizati.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\82QSKBY5\Gordillo et al. - 2008 - DC triode sputtering deposition and characterizati.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\910\S0022024808006416.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\Y2FB9KRT\S0022024808006416.html:text/html},
}