by P. and Plaza J. Ghita and M. and García B.J. Sánchez
Reference:
P. and Plaza J. Ghita and M. and García B.J. Sánchez, “Growth rate and mole fraction dependence on temperature during growth of Ga1-xInxAs by chemical beam epitaxy using triethylgallium, trimethylindium and tertiarybutilarsine”, Zacopane, Poland, 2009.
Bibtex Entry:
@misc{ghita_p_growth_2009,
address = {Zacopane, Poland},
type = {Poster contribution},
title = {Growth rate and mole fraction dependence on temperature during growth of {Ga1}-{xInxAs} by chemical beam epitaxy using triethylgallium, trimethylindium and tertiarybutilarsine},
shorttitle = {({EuroMEB09})},
author = {{Ghita, P.} and {Plaza,J.} and {Sánchez, M.} and {García, B.J.}},
month = mar,
year = {2009},
}