by Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillón, E. San Andrés and F. Calle
Abstract:
AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd2O3as gate dielectric were irradiated with 2-MeV protons up to fluence of 1 × 1015cm-2. Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors’ characteristics. The Gd2O3gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd2O3gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd2O3gate layer before and after irradiation are also discussed.
Reference:
Z. Gao, M. F. Romero, A. Redondo-Cubero, M. A. Pampillón, E. San Andrés and F. Calle, “Effects of Gd2O3Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs”, IEEE Electron Device Letters, vol. 38, no. 5, pp. 611–614.
Bibtex Entry:
@article{gao_effects_2017,
title = {Effects of {Gd2O3Gate} {Dielectric} on {Proton}-{Irradiated} {AlGaN}/{GaN} {HEMTs}},
volume = {38},
doi = {10.1109/LED.2017.2682795},
abstract = {AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd2O3as gate dielectric were irradiated with 2-MeV protons up to fluence of 1 × 1015cm-2. Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd2O3gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd2O3gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd2O3gate layer before and after irradiation are also discussed.},
number = {5},
journal = {IEEE Electron Device Letters},
author = {Gao, Z. and Romero, M. F. and Redondo-Cubero, A. and Pampillón, M. A. and Andrés, E. San and Calle, F.},
month = may,
year = {2017},
keywords = {proton irradiation, AlGaN-GaN, AlGaN/GaN, aluminium compounds, electron volt energy 2 MeV, gadolinium compounds, gallium compounds, gate dielectric, Gd2O3, HEMTs, high electron mobility transistors, III-V semiconductors, leakage current, MOS-HEMT, MOS-HEMTs, MOSFET, proton-irradiated HEMT, radiation hardening (electronics), scanning transmission electron microscopy, scanning-transmission electron microscopy, Schottky gate devices, Schottky gate field effect transistors, Schottky gate HEMT, wide band gap semiconductors},
pages = {611--614},
file = {IEEE Xplore Abstract Record:E:\Usuarios\Administrator\Zotero\storage\MSB4RMLY\authors.html:text/html;IEEE Xplore Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\Z6QFDSKU\Gao et al. - 2017 - Effects of Gd2O3Gate Dielectric on Proton-Irradiat.pdf:application/pdf},
}