by R. Gago, L. Vázquez, O. Plantevin, T. H. Metzger, J. Muñoz-García, R. Cuerno and M. Castro
Abstract:
The temporal evolution of the characteristic wavelength (λ)(λ)textlessmath display=”inline” overflow=”scroll” altimg=”eq-00001.gif”textgreatertextlessmrowtextgreatertextlessmotextgreater(textless/motextgreatertextlessmitextgreaterλtextless/mitextgreatertextlessmotextgreater)textless/motextgreatertextless/mrowtextgreatertextless/mathtextgreater and ordering range (ξ)(ξ)textlessmath display=”inline” overflow=”scroll” altimg=”eq-00002.gif”textgreatertextlessmrowtextgreatertextlessmotextgreater(textless/motextgreatertextlessmitextgreaterξtextless/mitextgreatertextlessmotextgreater)textless/motextgreatertextless/mrowtextgreatertextless/mathtextgreater of self-organized nanodot patterns induced during Ar+Ar+textlessmath display=”inline” overflow=”scroll” altimg=”eq-00003.gif”textgreatertextlessmsuptextgreatertextlessmi mathvariant=”normal”textgreaterArtextless/mitextgreatertextlessmotextgreater+textless/motextgreatertextless/msuptextgreatertextless/mathtextgreater ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of λλtextlessmath display=”inline” overflow=”scroll” altimg=”eq-00004.gif”textgreatertextlessmitextgreaterλtextless/mitextgreatertextless/mathtextgreater (up to 54–60nm54–60nmtextlessmath display=”inline” overflow=”scroll” altimg=”eq-00005.gif”textgreatertextlessmrowtextgreatertextlessmntextgreater54textless/mntextgreatertextlessmotextgreater–textless/motextgreatertextlessmntextgreater60textless/mntextgreatertextlessmspace width=”0.3em”textgreatertextless/mspacetextgreatertextlessmitextgreaternmtextless/mitextgreatertextless/mrowtextgreatertextless/mathtextgreater) and increase in ξξtextlessmath display=”inline” overflow=”scroll” altimg=”eq-00006.gif”textgreatertextlessmitextgreaterξtextless/mitextgreatertextless/mathtextgreater (up to 400–500nm400–500nmtextlessmath display=”inline” overflow=”scroll” altimg=”eq-00007.gif”textgreatertextlessmrowtextgreatertextlessmntextgreater400textless/mntextgreatertextlessmotextgreater–textless/motextgreatertextlessmntextgreater500textless/mntextgreatertextlessmspace width=”0.3em”textgreatertextless/mspacetextgreatertextlessmitextgreaternmtextless/mitextgreatertextless/mrowtextgreatertextless/mathtextgreater) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations.
Reference:
R. Gago, L. Vázquez, O. Plantevin, T. H. Metzger, J. Muñoz-García, R. Cuerno and M. Castro, “Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering”, Applied Physics Letters, vol. 89, no. 23, pp. 233101.
Bibtex Entry:
@article{gago_order_2006,
title = {Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering},
volume = {89},
issn = {0003-6951},
url = {http://aip.scitation.org/doi/10.1063/1.2398916},
doi = {10.1063/1.2398916},
abstract = {The temporal evolution of the characteristic wavelength (λ)(λ){textless}math display="inline" overflow="scroll" altimg="eq-00001.gif"{textgreater}{textless}mrow{textgreater}{textless}mo{textgreater}({textless}/mo{textgreater}{textless}mi{textgreater}λ{textless}/mi{textgreater}{textless}mo{textgreater}){textless}/mo{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater} and ordering range (ξ)(ξ){textless}math display="inline" overflow="scroll" altimg="eq-00002.gif"{textgreater}{textless}mrow{textgreater}{textless}mo{textgreater}({textless}/mo{textgreater}{textless}mi{textgreater}ξ{textless}/mi{textgreater}{textless}mo{textgreater}){textless}/mo{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater} of self-organized nanodot patterns induced during Ar+Ar+{textless}math display="inline" overflow="scroll" altimg="eq-00003.gif"{textgreater}{textless}msup{textgreater}{textless}mi mathvariant="normal"{textgreater}Ar{textless}/mi{textgreater}{textless}mo{textgreater}+{textless}/mo{textgreater}{textless}/msup{textgreater}{textless}/math{textgreater} ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of λλ{textless}math display="inline" overflow="scroll" altimg="eq-00004.gif"{textgreater}{textless}mi{textgreater}λ{textless}/mi{textgreater}{textless}/math{textgreater} (up to 54–60nm54–60nm{textless}math display="inline" overflow="scroll" altimg="eq-00005.gif"{textgreater}{textless}mrow{textgreater}{textless}mn{textgreater}54{textless}/mn{textgreater}{textless}mo{textgreater}–{textless}/mo{textgreater}{textless}mn{textgreater}60{textless}/mn{textgreater}{textless}mspace width="0.3em"{textgreater}{textless}/mspace{textgreater}{textless}mi{textgreater}nm{textless}/mi{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater}) and increase in ξξ{textless}math display="inline" overflow="scroll" altimg="eq-00006.gif"{textgreater}{textless}mi{textgreater}ξ{textless}/mi{textgreater}{textless}/math{textgreater} (up to 400–500nm400–500nm{textless}math display="inline" overflow="scroll" altimg="eq-00007.gif"{textgreater}{textless}mrow{textgreater}{textless}mn{textgreater}400{textless}/mn{textgreater}{textless}mo{textgreater}–{textless}/mo{textgreater}{textless}mn{textgreater}500{textless}/mn{textgreater}{textless}mspace width="0.3em"{textgreater}{textless}/mspace{textgreater}{textless}mi{textgreater}nm{textless}/mi{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater}) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations.},
number = {23},
urldate = {2017-07-21},
journal = {Applied Physics Letters},
author = {Gago, R. and Vázquez, L. and Plantevin, O. and Metzger, T. H. and Muñoz-García, J. and Cuerno, R. and Castro, M.},
month = dec,
year = {2006},
pages = {233101},
file = {Full Text PDF:E:\cmam_papers\files\518\Gago et al. - 2006 - Order enhancement and coarsening of self-organized.pdf:application/pdf;Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\3TVQ7PC2\Gago et al. - 2006 - Order enhancement and coarsening of self-organized.pdf:application/pdf;Snapshot:E:\cmam_papers\files\519\1.html:text/html;Snapshot:E:\Usuarios\Administrator\Zotero\storage\7NLCNLXK\1.html:text/html},
}