by R. Gago, M. Vinnichenko, R. Hübner and A. Redondo-Cubero
Abstract:
Chromium oxide (CrOx) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O2 discharge as a function of the O2 fraction in the gas mixture (ƒ) and for substrate temperatures, Ts, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing Ts the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr2O3 (x = 1.5) is formed by increasing Ts. In amorphous CrOx, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr2O3 at elevated Ts. These structural changes also reflect on the optical and morphological properties of the films.
Reference:
R. Gago, M. Vinnichenko, R. Hübner and A. Redondo-Cubero, “Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition”, Journal of Alloys and Compounds, vol. 672, no. Supplement C, pp. 529–535.
Bibtex Entry:
@article{gago_bonding_2016,
title = {Bonding structure and morphology of chromium oxide films grown by pulsed-{DC} reactive magnetron sputter deposition},
volume = {672},
issn = {0925-8388},
url = {http://www.sciencedirect.com/science/article/pii/S0925838816304625},
doi = {10.1016/j.jallcom.2016.02.194},
abstract = {Chromium oxide (CrOx) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O2 discharge as a function of the O2 fraction in the gas mixture (ƒ) and for substrate temperatures, Ts, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing Ts the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr2O3 (x = 1.5) is formed by increasing Ts. In amorphous CrOx, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr2O3 at elevated Ts. These structural changes also reflect on the optical and morphological properties of the films.},
number = {Supplement C},
urldate = {2017-11-03},
journal = {Journal of Alloys and Compounds},
author = {Gago, R. and Vinnichenko, M. and Hübner, R. and Redondo-Cubero, A.},
month = jul,
year = {2016},
keywords = {Atomic scale structure, NEXAFS/XANES, Oxide materials, Vapour deposition},
pages = {529--535},
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}