by R. N. Frentrop, V. Tormo-Marquez, F. B. Segerink, M. C. Pujol, J. Olivares and S. M. Garcia-Blanco
Abstract:
KY(WO4)2 crystal has a lot of potential as an on-chip waveguide material for lanthanide ion-doped, Raman active lasers and on-chip amplifiers. One method of fabricating these waveguides is by using swift carbon ion irradiation, which produces a step-like, damage-induced refractive index contrast of up to Δ Δ n ≈ ≈ 0.2. The irradiation is followed by an annealing step to reduce color centers that cause high optical absorption, leading to an optical slab waveguide with optical transmission losses as low as 1.5 dB/cm at 1550 nm. In this article, we report an upper limit of ∼450 ∘ C ∼450°C to the annealing temperature, above which stresses and recrystallization induce additional scattering detrimental to waveguide performance. The effects are characterized using transmission electron microscopy and Raman microscopy.
Reference:
R. N. Frentrop, V. Tormo-Marquez, F. B. Segerink, M. C. Pujol, J. Olivares and S. M. Garcia-Blanco, “High-temperature recrystallization effects in swift heavy ion irradiated KY(WO4)2”, Journal of Applied Physics, vol. 130, no. 18, pp. 185109.
Bibtex Entry:
@article{frentrop_high-temperature_2021,
	title = {High-temperature recrystallization effects in swift heavy ion irradiated {KY}({WO4})2},
	volume = {130},
	issn = {0021-8979},
	url = {https://aip.scitation.org/doi/10.1063/5.0060765},
	doi = {10.1063/5.0060765},
	abstract = {KY(WO4)2 crystal has a lot of potential as an on-chip waveguide material for lanthanide ion-doped, Raman active lasers and on-chip amplifiers. One method of fabricating these waveguides is by using swift carbon ion irradiation, which produces a step-like, damage-induced refractive index contrast of up to 
Δ
Δ
n
≈
≈
0.2. The irradiation is followed by an annealing step to reduce color centers that cause high optical absorption, leading to an optical slab waveguide with optical transmission losses as low as 1.5 dB/cm at 1550 nm. In this article, we report an upper limit of 
∼450
∘
C
∼450°C
 to the annealing temperature, above which stresses and recrystallization induce additional scattering detrimental to waveguide performance. The effects are characterized using transmission electron microscopy and Raman microscopy.},
	number = {18},
	urldate = {2022-01-10},
	journal = {Journal of Applied Physics},
	author = {Frentrop, R. N. and Tormo-Marquez, V. and Segerink, F. B. and Pujol, M. C. and Olivares, J. and Garcia-Blanco, S. M.},
	month = nov,
	year = {2021},
	pages = {185109},
	file = {Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\3RX65PB7\Frentrop et al. - 2021 - High-temperature recrystallization effects in swif.pdf:application/pdf},
}