by Tomás Fernández Bouvier
Abstract:
Future quantum computing technologies require an implantation precision which is higher than any focused ion beam technology currently existing. Towards improving the placement precision of P donors in a Si diamond lattice, the use of a PF2 molecular ion instead of a single atom P ion has significantly improved the detection confidence of the implant while preserving a low straggling in its placement. Computer simulations using the molecular dynamics method can provide additional details on the process. In my presentation, I will discuss the physics of the energy deposited by molecular ions moving in the material via electronic stopping power and how using a molecule can make the interpretation of the electronic signal difficult as an indication of the donor depth in the lattice. I will present the synergies in energy deposition due to simultaneous impact of three ions during a molecular ion implantation and I will describe in detail the damage caused by the highly energetic molecules in the lattice which is different from the one caused by separate implantation of their atomic components.
Reference:
Tomás Fernández Bouvier, “Molecular dynamics insights on the molecular P implantation for scalable spin-qubit arrays”, Seminars at CMAM, CMAM.
Bibtex Entry:
@misc{fernandez_bouvier_molecular_2024, address = {CMAM}, type = {Seminars at {CMAM}}, title = {Molecular dynamics insights on the molecular {P} implantation for scalable spin-qubit arrays}, abstract = {Future quantum computing technologies require an implantation precision which is higher than any focused ion beam technology currently existing. Towards improving the placement precision of P donors in a Si diamond lattice, the use of a PF2 molecular ion instead of a single atom P ion has significantly improved the detection confidence of the implant while preserving a low straggling in its placement. Computer simulations using the molecular dynamics method can provide additional details on the process. In my presentation, I will discuss the physics of the energy deposited by molecular ions moving in the material via electronic stopping power and how using a molecule can make the interpretation of the electronic signal difficult as an indication of the donor depth in the lattice. I will present the synergies in energy deposition due to simultaneous impact of three ions during a molecular ion implantation and I will describe in detail the damage caused by the highly energetic molecules in the lattice which is different from the one caused by separate implantation of their atomic components.}, author = {Fernández Bouvier, Tomás}, month = oct, year = {2024}, }