by K. Ben Saddik, S. Fernández-Garrido, R. Volkov, J. Grandal, N. Borgardt and B. J. García
Abstract:
We investigated the chemical beam epitaxy of GaP 1 − xN x grown on nominally ( 001 )-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04, it is possible to synthesize smooth and chemically homogeneous GaP 1 − xN x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of 113 -faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent ( 113 ) and ( 1 ¯ 1 ¯ 3 ). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − xN x layers lattice matched to Si ( x = 0.021) or even with N content up to x = 0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition.
Reference:
K. Ben Saddik, S. Fernández-Garrido, R. Volkov, J. Grandal, N. Borgardt and B. J. García, “Growth modes and chemical-phase separation in GaP1−xNx layers grown by chemical beam epitaxy on GaP/Si(001)”, Journal of Applied Physics, vol. 134, no. 17, pp. 175703.
Bibtex Entry:
@article{ben_saddik_growth_2023,
title = {Growth modes and chemical-phase separation in {GaP1}−{xNx} layers grown by chemical beam epitaxy on {GaP}/{Si}(001)},
volume = {134},
issn = {0021-8979},
url = {https://doi.org/10.1063/5.0173748},
doi = {10.1063/5.0173748},
abstract = {We investigated the chemical beam epitaxy of GaP 1 − xN x grown on nominally ( 001 )-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode and the chemical, morphological, and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by several techniques. Our results show that, up to x ≈ 0.04, it is possible to synthesize smooth and chemically homogeneous GaP 1 − xN x layers with a high structural quality. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [ 110 ] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of { 113 }-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent ( 113 ) and ( 1 ¯ 1 ¯ 3 ). On the basis of this study, we conclude on the feasibility of fabricating homogeneous thick GaP 1 − xN x layers lattice matched to Si ( x = 0.021) or even with N content up to x = 0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological–compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D–3D growth mode transition.},
number = {17},
urldate = {2024-05-21},
journal = {Journal of Applied Physics},
author = {Ben Saddik, K. and Fernández-Garrido, S. and Volkov, R. and Grandal, J. and Borgardt, N. and García, B. J.},
month = nov,
year = {2023},
pages = {175703},
file = {Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\IHQEP6QX\Ben Saddik et al. - 2023 - Growth modes and chemical-phase separation in GaP1.pdf:application/pdf},
}