by Diana Bachiller-Perea, Aurélien Debelle, Lionel Thomé and Jean-Paul Crocombette
Abstract:
The initial stages of defect generation in magnesia (MgO) single crystals irradiated with 1.2 MeV Au+ ions at 573, 773, and 1073 K and at different fluences have been studied. High-resolution X-ray diffraction was used to measure the irradiation-induced elastic strain. Point-defect relaxation volumes were computed using density functional theory calculations. The defect concentration was then calculated. It was found to increase with ion fluence at all temperatures, with maximum values being textasciitilde0.46 % at 573 K, textasciitilde0.24 % at 773 K, and textasciitilde0.13 % at 1073 K. The decrease in the maximum strain with increasing temperature indicates a dynamic annealing. The defect generation efficiencies were found to be very low and the values obtained were in the range of textasciitilde2.4, 1.2, and 0.6 % at 573, 773, and 1073 K, respectively. An annealing effect due to electronic energy deposition is suspected to explain these low values.
Reference:
Diana Bachiller-Perea, Aurélien Debelle, Lionel Thomé and Jean-Paul Crocombette, “Study of the initial stages of defect generation in ion-irradiated MgO at elevated temperatures using high-resolution X-ray diffraction”, Journal of Materials Science, vol. 51, no. 3, pp. 1456–1462.
Bibtex Entry:
@article{bachiller-perea_study_2016,
title = {Study of the initial stages of defect generation in ion-irradiated {MgO} at elevated temperatures using high-resolution {X}-ray diffraction},
volume = {51},
issn = {0022-2461, 1573-4803},
url = {https://link.springer.com/article/10.1007/s10853-015-9465-3},
doi = {10.1007/s10853-015-9465-3},
abstract = {The initial stages of defect generation in magnesia (MgO) single crystals irradiated with 1.2 MeV Au+ ions at 573, 773, and 1073 K and at different fluences have been studied. High-resolution X-ray diffraction was used to measure the irradiation-induced elastic strain. Point-defect relaxation volumes were computed using density functional theory calculations. The defect concentration was then calculated. It was found to increase with ion fluence at all temperatures, with maximum values being {textasciitilde}0.46 % at 573 K, {textasciitilde}0.24 % at 773 K, and {textasciitilde}0.13 % at 1073 K. The decrease in the maximum strain with increasing temperature indicates a dynamic annealing. The defect generation efficiencies were found to be very low and the values obtained were in the range of {textasciitilde}2.4, 1.2, and 0.6 % at 573, 773, and 1073 K, respectively. An annealing effect due to electronic energy deposition is suspected to explain these low values.},
language = {en},
number = {3},
urldate = {2017-11-03},
journal = {Journal of Materials Science},
author = {Bachiller-Perea, Diana and Debelle, Aurélien and Thomé, Lionel and Crocombette, Jean-Paul},
month = feb,
year = {2016},
pages = {1456--1462},
file = {Full Text PDF:E:\cmam_papers\files\1453\Bachiller-Perea et al. - 2016 - Study of the initial stages of defect generation i.pdf:application/pdf;Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\EUWRLQC4\Bachiller-Perea et al. - 2016 - Study of the initial stages of defect generation i.pdf:application/pdf;Snapshot:E:\cmam_papers\files\1454\10.html:text/html;Snapshot:E:\Usuarios\Administrator\Zotero\storage\PEVA3XDY\10.html:text/html},
}