Ion beam analysis of ternary and quaternary AlxInyGa1-x-yN/GaN heterostructures for high power electronic devices

by Redondo-Cubero A., Gago R., González-Posada F., Fernández-Garrido S., Muñoz-Martín A., A.F. Braña, U. Kreissig, D. Grambole and E.

Reference:

Redondo-Cubero A., Gago R., González-Posada F., Fernández-Garrido S., Muñoz-Martín A., A.F. Braña, U. Kreissig, D. Grambole and E., “Ion beam analysis of ternary and quaternary AlxInyGa1-x-yN/GaN heterostructures for high power electronic devices”, Oral Contribution, E-MRS 2007 Spring Meeting, Strasbourg, France.

Bibtex Entry:

@misc{a_ion_2007,
	address = {E-MRS 2007 Spring Meeting, Strasbourg, France},
	type = {Oral {Contribution}},
	title = {Ion beam analysis of ternary and quaternary {AlxInyGa1}-x-{yN}/{GaN} heterostructures for high power electronic devices},
	author = {A., , Redondo-Cubero and R., , Gago and F., , González-Posada and S., , Fernández-Garrido and A., , Muñoz-Martín and A.F. Braña, and U. Kreissig, and D. Grambole, and E.},
	month = jun,
	year = {2007},
}