by Redondo-Cubero A., Lorenz K., Franco N., Fernández-Garrido S., Gago R., P.J.M. and Muñoz E. Smulders and E. and Watson I.W. Calleja
Reference:
Redondo-Cubero A., Lorenz K., Franco N., Fernández-Garrido S., Gago R., P.J.M. and Muñoz E. Smulders and E. and Watson I.W. Calleja, “Accurate measurement of strain in semiconductor heterostructures by high-energy ion channeling: the influence of steering effects”, Oral Contribution, 19th International meeting on Ion Beam Analysis, Cambridge, UK.
Bibtex Entry:
@misc{a_accurate_2009,
address = {19th International meeting on Ion Beam Analysis, Cambridge, UK},
type = {Oral {Contribution}},
title = {Accurate measurement of strain in semiconductor heterostructures by high-energy ion channeling: the influence of steering effects},
author = {A., , Redondo-Cubero and K., , Lorenz and N., , Franco and S., , Fernández-Garrido and R., , Gago and {Smulders, P.J.M.} and {Muñoz, E.} and {Calleja, E.} and {Watson, I.W.} and {Alves, E.}},
month = sep,
year = {2009},
}