by J. Pereiro, A. Redondo-Cubero, S. Fernandez-Garrido, C. Rivera, A. Navarro, E. Muñoz, E. Calleja and R. Gago
Abstract:
This work reports on the fabrication of Schottky barrier based Mg-doped (In,Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent the fabrication of Schottky contacts on unintentionally doped (In,Ga)N layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). Rectifying properties of the contacts exhibited a major improvement when (In,Ga)N : Mg was used. The electrical and optical measurements of the layers showed a hole concentration of up to 3 × 10 19 holes cm −3 with a Mg acceptor activation energy of 60 meV. Back-illuminated photodiodes fabricated on 800 nm thick Mg-doped In 0.18 Ga 0.82 N layers exhibited a band pass photo-response with a rejection ratio textgreater10 2 between 420 and 470 nm and peak responsivities of 87 mA W −1 at 470 nm. The suitability of these photodiodes for fluorescence measurements was demonstrated.
Reference:
J. Pereiro, A. Redondo-Cubero, S. Fernandez-Garrido, C. Rivera, A. Navarro, E. Muñoz, E. Calleja and R. Gago, “Mg doping of InGaN layers grown by PA-MBE for the fabrication of Schottky barrier photodiodes”, Journal of Physics D: Applied Physics, vol. 43, no. 33, pp. 335101.
Bibtex Entry:
@article{pereiro_mg_2010,
title = {Mg doping of {InGaN} layers grown by {PA}-{MBE} for the fabrication of {Schottky} barrier photodiodes},
volume = {43},
issn = {0022-3727},
url = {http://stacks.iop.org/0022-3727/43/i=33/a=335101},
doi = {10.1088/0022-3727/43/33/335101},
abstract = {This work reports on the fabrication of Schottky barrier based Mg-doped (In,Ga)N layers for fluorescence applications. Mg acceptors are used in order to compensate surface and bulk donors that prevent the fabrication of Schottky contacts on unintentionally doped (In,Ga)N layers grown by plasma-assisted molecular beam epitaxy (PA-MBE). Rectifying properties of the contacts exhibited a major improvement when (In,Ga)N : Mg was used. The electrical and optical measurements of the layers showed a hole concentration of up to 3 × 10 19 holes cm −3 with a Mg acceptor activation energy of 60 meV. Back-illuminated photodiodes fabricated on 800 nm thick Mg-doped In 0.18 Ga 0.82 N layers exhibited a band pass photo-response with a rejection ratio {textgreater}10 2 between 420 and 470 nm and peak responsivities of 87 mA W −1 at 470 nm. The suitability of these photodiodes for fluorescence measurements was demonstrated.},
language = {en},
number = {33},
urldate = {2017-08-01},
journal = {Journal of Physics D: Applied Physics},
author = {Pereiro, J. and Redondo-Cubero, A. and Fernandez-Garrido, S. and Rivera, C. and Navarro, A. and Muñoz, E. and Calleja, E. and Gago, R.},
year = {2010},
pages = {335101},
file = {IOP Full Text PDF:E:\cmam_papers\files\707\Pereiro et al. - 2010 - Mg doping of InGaN layers grown by PA-MBE for the .pdf:application/pdf;IOP Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\62AGLS2R\Pereiro et al. - 2010 - Mg doping of InGaN layers grown by PA-MBE for the .pdf:application/pdf},
}