by R. Gonzalez-Arrabal, N. Gordillo, M. S. Martin-Gonzalez, R. Ruiz-Bustos and F. Agulló-López
Abstract:
The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300 °C300 °Ctextlessmath display=”inline” overflow=”scroll” altimg=”eq-00001.gif”textgreatertextlessmrowtextgreatertextlessmntextgreater300textless/mntextgreatertextlessmtexttextgreater textless/mtexttextgreatertextlessmotextgreater°textless/motextgreatertextlessmtexttextgreaterCtextless/mtexttextgreatertextless/mrowtextgreatertextless/mathtextgreater. Films were characterized by means of ion-beam analysis (IBMA), X-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry techniques (SE). The data reveal that even when the total (integrated over the whole thickness) atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100 °C100 °Ctextlessmath display=”inline” overflow=”scroll” altimg=”eq-00002.gif”textgreatertextlessmrowtextgreatertextlessmntextgreater100textless/mntextgreatertextlessmtexttextgreater textless/mtexttextgreatertextlessmotextgreater°textless/motextgreatertextlessmtexttextgreaterCtextless/mtexttextgreatertextless/mrowtextgreatertextless/mathtextgreater. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO3ReO3textlessmath display=”inline” overflow=”scroll” altimg=”eq-00003.gif”textgreatertextlessmrowtextgreatertextlessmsubtextgreatertextlessmrowtextgreatertextlessmtexttextgreaterReOtextless/mtexttextgreatertextless/mrowtextgreatertextlessmntextgreater3textless/mntextgreatertextless/msubtextgreatertextless/mrowtextgreatertextless/mathtextgreater crystal lattice forming a solid solution. The influence of nitrogen migration on the optical (electronic) properties of the films will be discussed.
Reference:
R. Gonzalez-Arrabal, N. Gordillo, M. S. Martin-Gonzalez, R. Ruiz-Bustos and F. Agulló-López, “Thermal stability of copper nitride thin films: The role of nitrogen migration”, Journal of Applied Physics, vol. 107, no. 10, pp. 103513.
Bibtex Entry:
@article{gonzalez-arrabal_thermal_2010,
title = {Thermal stability of copper nitride thin films: {The} role of nitrogen migration},
volume = {107},
issn = {0021-8979},
shorttitle = {Thermal stability of copper nitride thin films},
url = {http://aip.scitation.org/doi/10.1063/1.3369450},
doi = {10.1063/1.3369450},
abstract = {The atomic composition, structural, morphological, and optical properties of N-rich copper nitride thin films have been investigated prior to and after annealing them in vacuum at temperatures up to 300 °C300 °C{textless}math display="inline" overflow="scroll" altimg="eq-00001.gif"{textgreater}{textless}mrow{textgreater}{textless}mn{textgreater}300{textless}/mn{textgreater}{textless}mtext{textgreater} {textless}/mtext{textgreater}{textless}mo{textgreater}°{textless}/mo{textgreater}{textless}mtext{textgreater}C{textless}/mtext{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater}. Films were characterized by means of ion-beam analysis (IBMA), X-ray diffraction (XRD), atomic force microscopy (AFM), and spectroscopic ellipsometry techniques (SE). The data reveal that even when the total (integrated over the whole thickness) atomic composition of the films remains constant, nitrogen starts to migrate from the bulk to the film surface, without out-diffusing, at temperatures as low as 100 °C100 °C{textless}math display="inline" overflow="scroll" altimg="eq-00002.gif"{textgreater}{textless}mrow{textgreater}{textless}mn{textgreater}100{textless}/mn{textgreater}{textless}mtext{textgreater} {textless}/mtext{textgreater}{textless}mo{textgreater}°{textless}/mo{textgreater}{textless}mtext{textgreater}C{textless}/mtext{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater}. This migration leads to two chemical phases with different atomic concentration of nitrogen, lattice parameters, and crystallographic orientation but with the same crystal structure. XRD experimental and Rietveld refined data seem to confirm that nitrogen excess accommodates in interstitial locations within the anti-ReO3ReO3{textless}math display="inline" overflow="scroll" altimg="eq-00003.gif"{textgreater}{textless}mrow{textgreater}{textless}msub{textgreater}{textless}mrow{textgreater}{textless}mtext{textgreater}ReO{textless}/mtext{textgreater}{textless}/mrow{textgreater}{textless}mn{textgreater}3{textless}/mn{textgreater}{textless}/msub{textgreater}{textless}/mrow{textgreater}{textless}/math{textgreater} crystal lattice forming a solid solution. The influence of nitrogen migration on the optical (electronic) properties of the films will be discussed.},
number = {10},
urldate = {2017-08-01},
journal = {Journal of Applied Physics},
author = {Gonzalez-Arrabal, R. and Gordillo, N. and Martin-Gonzalez, M. S. and Ruiz-Bustos, R. and Agulló-López, F.},
month = may,
year = {2010},
pages = {103513},
file = {Full Text PDF:E:\cmam_papers\files\684\Gonzalez-Arrabal et al. - 2010 - Thermal stability of copper nitride thin films Th.pdf:application/pdf;Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\WYBZM4LR\Gonzalez-Arrabal et al. - 2010 - Thermal stability of copper nitride thin films Th.pdf:application/pdf;Snapshot:E:\cmam_papers\files\685\1.html:text/html;Snapshot:E:\Usuarios\Administrator\Zotero\storage\S9LMDWXW\1.html:text/html},
}