by R. Gonzalez-Arrabal, A. Redondo-Cubero, Y. Gonzalez, L. Gonzalez and M. S. Martin-Gonzalez
Abstract:
The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.
Reference:
R. Gonzalez-Arrabal, A. Redondo-Cubero, Y. Gonzalez, L. Gonzalez and M. S. Martin-Gonzalez, “Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 269, no. 8, pp. 733–738.
Bibtex Entry:
@article{gonzalez-arrabal_depth_2011,
title = {Depth dependent lattice disorder and strain in {Mn}-implanted and post-annealed {InAs} thin films},
volume = {269},
issn = {0168-583X},
url = {http://www.sciencedirect.com/science/article/pii/S0168583X11001716},
doi = {10.1016/j.nimb.2011.02.004},
abstract = {The lattice order degree and the strain in as-grown, Mn-implanted and post-implanted annealed InAs thin films were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements.},
number = {8},
urldate = {2017-10-09},
journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms},
author = {Gonzalez-Arrabal, R. and Redondo-Cubero, A. and Gonzalez, Y. and Gonzalez, L. and Martin-Gonzalez, M. S.},
month = apr,
year = {2011},
keywords = {III–V Semiconductor, InAs/GaAs thin films, lattice order degree and strain, RBS channelling},
pages = {733--738},
file = {ScienceDirect Full Text PDF:E:\cmam_papers\files\1093\Gonzalez-Arrabal et al. - 2011 - Depth dependent lattice disorder and strain in Mn-.pdf:application/pdf;ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\SEGWVS89\Gonzalez-Arrabal et al. - 2011 - Depth dependent lattice disorder and strain in Mn-.pdf:application/pdf;ScienceDirect Snapshot:E:\cmam_papers\files\1091\S0168583X11001716.html:text/html;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\WW2ITR8T\S0168583X11001716.html:text/html},
}