by Omar Concepción, Miguel Galván-Arellano, Vicente Torres-Costa, Aurelio Climent-Font, Daniel Bahena, Miguel Manso Silván, Arturo Escobosa and Osvaldo de Melo
Abstract:
Bi2Te3 is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi–Te system. This work presents a study of the physical vapor transport growth of Bi–Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi–Te system, i.e., Bi2Te3, BiTe, and Bi4Te3. Epitaxial films of these compounds were prepared on sapphire and silicon substrates. The results were verified by X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectrometry.
Reference:
Omar Concepción, Miguel Galván-Arellano, Vicente Torres-Costa, Aurelio Climent-Font, Daniel Bahena, Miguel Manso Silván, Arturo Escobosa and Osvaldo de Melo, “Controlling the Epitaxial Growth of Bi2Te3, BiTe, and Bi4Te3 Pure Phases by Physical Vapor Transport”, Inorganic Chemistry, vol. 57, no. 16, pp. 10090–10099.
Bibtex Entry:
@article{concepcion_controlling_2018,
title = {Controlling the {Epitaxial} {Growth} of {Bi2Te3}, {BiTe}, and {Bi4Te3} {Pure} {Phases} by {Physical} {Vapor} {Transport}},
volume = {57},
issn = {0020-1669},
url = {https://doi.org/10.1021/acs.inorgchem.8b01235},
doi = {10.1021/acs.inorgchem.8b01235},
abstract = {Bi2Te3 is a well-studied material because of its thermoelectric properties and, recently, has also been studied as a topological insulator. However, it is only one of several compounds in the Bi–Te system. This work presents a study of the physical vapor transport growth of Bi–Te material focused on determining the growth conditions required to selectively obtain a desired phase of the Bi–Te system, i.e., Bi2Te3, BiTe, and Bi4Te3. Epitaxial films of these compounds were prepared on sapphire and silicon substrates. The results were verified by X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectrometry.},
number = {16},
urldate = {2019-01-24},
journal = {Inorganic Chemistry},
author = {Concepción, Omar and Galván-Arellano, Miguel and Torres-Costa, Vicente and Climent-Font, Aurelio and Bahena, Daniel and Manso Silván, Miguel and Escobosa, Arturo and de Melo, Osvaldo},
month = aug,
year = {2018},
pages = {10090--10099},
file = {ACS Full Text PDF w/ Links:E:\cmam_papers\files\1742\Concepción et al. - 2018 - Controlling the Epitaxial Growth of Bi2Te3, BiTe, .pdf:application/pdf;ACS Full Text PDF w/ Links:E:\Usuarios\Administrator\Zotero\storage\ZY5H84EJ\Concepción et al. - 2018 - Controlling the Epitaxial Growth of Bi2Te3, BiTe, .pdf:application/pdf;ACS Full Text Snapshot:E:\cmam_papers\files\1743\acs.inorgchem.html:text/html;ACS Full Text Snapshot:E:\Usuarios\Administrator\Zotero\storage\XZ97NGLE\acs.inorgchem.html:text/html},
}