by D. B. Bonneville, C. E. Osornio-Martinez, M. Dijkstra and S. M. García-Blanco
Abstract:
We demonstrate reactively sputtered Al2O3:Er3+ waveguide amplifiers with an erbium concentration of 3.9 × 1020 ions/cm3, capable of achieving over 30 dB small signal net gain at 1532 nm using bidirectional pumping at 1480 nm. We observe on chip output powers of 10.2-13.6 dBm of amplified signal power at 1532 nm for a 12.9 cm waveguide amplifier considering -25.4 dB of lumped coupling losses per facet. Annealing was used to improve the performance of the devices, which were patterned using electron beam lithography and reactive ion etching. This result, to our knowledge, represents record breaking on-chip internal net gain for Al2O3:Er3+ waveguide amplifiers, which show promise over other technologies due to wafer scalability and promise of easy monolithic integration with other material platforms to support a wide variety of applications.
Reference:
D. B. Bonneville, C. E. Osornio-Martinez, M. Dijkstra and S. M. García-Blanco, “High on-chip gain spiral Al$_{textrm{2}}$O$_{textrm{3}}$:Er$^{textrm{3+}}$ waveguide amplifiers”, Optics Express, vol. 32, no. 9, pp. 15527–15536.
Bibtex Entry:
@article{bonneville_high_2024,
title = {High on-chip gain spiral {Al}$_{textrm{2}}${O}$_{textrm{3}}$:{Er}$^{textrm{3+}}$ waveguide amplifiers},
volume = {32},
copyright = {© 2024 Optica Publishing Group},
issn = {1094-4087},
shorttitle = {High on-chip gain spiral {Al}$_{textrm{2}}${O}$_{textrm{3}}$},
url = {https://opg.optica.org/oe/abstract.cfm?uri=oe-32-9-15527},
doi = {10.1364/OE.516705},
abstract = {We demonstrate reactively sputtered Al2O3:Er3+ waveguide amplifiers with an erbium concentration of 3.9 × 1020 ions/cm3, capable of achieving over 30 dB small signal net gain at 1532 nm using bidirectional pumping at 1480 nm. We observe on chip output powers of 10.2-13.6 dBm of amplified signal power at 1532 nm for a 12.9 cm waveguide amplifier considering -25.4 dB of lumped coupling losses per facet. Annealing was used to improve the performance of the devices, which were patterned using electron beam lithography and reactive ion etching. This result, to our knowledge, represents record breaking on-chip internal net gain for Al2O3:Er3+ waveguide amplifiers, which show promise over other technologies due to wafer scalability and promise of easy monolithic integration with other material platforms to support a wide variety of applications.},
language = {EN},
number = {9},
urldate = {2024-11-29},
journal = {Optics Express},
author = {Bonneville, D. B. and Osornio-Martinez, C. E. and Dijkstra, M. and García-Blanco, S. M.},
month = apr,
year = {2024},
keywords = {Electron beam lithography, Near infrared, Optical amplifiers, Optical components, Polarization control, Semiconductor optical amplifiers},
pages = {15527--15536},
file = {Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\8FUZHVMI\Bonneville et al. - 2024 - High on-chip gain spiral Al2O3su.pdf:application/pdf},
}