by K. Ben Saddik, M. J. Hernández, M. A. Pampillón, M. Cervera and B. J. García
Abstract:
The absorption coefficient and the energy gap of GaP1-xNx layers has been obtained by spectroscopic ellipsometry for samples grown on Si(001) substrates by chemical beam epitaxy with N mole fractions in the range 0 ≤ x ≤ 0.081. The resulting absorption spectra exhibit a direct band-like behavior near the absorption edge. The absorption coefficient values increase with the N content, reaching values in the range α ∼ 1-2×104 cm−1 in the vicinity of the absorption edge below the original GaP direct bandgap, which are comparable to those obtained for high efficiency solar cell materials. Furthermore, dependence of the absorption coefficient with increasing N content points to a strong GaP Γ-like character of the conduction-band wave function of GaP1-xNx alloys near the Brillouin zone center at k = 0, as predicted by the band anticrossing model. Bandgap energy values obtained by spectroscopic ellipsometry are compared with previous values obtained by photoluminescence measurements on the same samples, observing a shift of about 50–100 meV. Finally, the value of the band anticrossing parameter coupling the N level and the host GaP conduction band has been obtained from the dependence of both, the bandgap and the absorption coefficient, with the N content (2.1 and 3.3 eV respectively).
Reference:
K. Ben Saddik, M. J. Hernández, M. A. Pampillón, M. Cervera and B. J. García, “On the absorption coefficient of GaP1-xNx layers and its potential application for silicon photovoltaics”, Materials Science in Semiconductor Processing, vol. 185, pp. 109011.
Bibtex Entry:
@article{ben_saddik_absorption_2025,
title = {On the absorption coefficient of {GaP1}-{xNx} layers and its potential application for silicon photovoltaics},
volume = {185},
issn = {1369-8001},
url = {https://www.sciencedirect.com/science/article/pii/S1369800124009077},
doi = {10.1016/j.mssp.2024.109011},
abstract = {The absorption coefficient and the energy gap of GaP1-xNx layers has been obtained by spectroscopic ellipsometry for samples grown on Si(001) substrates by chemical beam epitaxy with N mole fractions in the range 0 ≤ x ≤ 0.081. The resulting absorption spectra exhibit a direct band-like behavior near the absorption edge. The absorption coefficient values increase with the N content, reaching values in the range α ∼ 1-2x104 cm−1 in the vicinity of the absorption edge below the original GaP direct bandgap, which are comparable to those obtained for high efficiency solar cell materials. Furthermore, dependence of the absorption coefficient with increasing N content points to a strong GaP Γ-like character of the conduction-band wave function of GaP1-xNx alloys near the Brillouin zone center at k = 0, as predicted by the band anticrossing model. Bandgap energy values obtained by spectroscopic ellipsometry are compared with previous values obtained by photoluminescence measurements on the same samples, observing a shift of about 50–100 meV. Finally, the value of the band anticrossing parameter coupling the N level and the host GaP conduction band has been obtained from the dependence of both, the bandgap and the absorption coefficient, with the N content (2.1 and 3.3 eV respectively).},
urldate = {2024-11-15},
journal = {Materials Science in Semiconductor Processing},
author = {Ben Saddik, K. and Hernández, M. J. and Pampillón, M. A. and Cervera, M. and García, B. J.},
month = jan,
year = {2025},
keywords = {Spectroscopic ellipsometry, Absorption coefficient, Band anticrossing, Dilute nitrides, III-V alloys, Solar cells},
pages = {109011},
}