by P. Aprà, J. Ripoll-Sau, J. Manzano-Santamaría, C. Munuera, J. Forneris, S. Ditalia Tchernij, P. Olivero, F. Picollo, E. Vittone and M. D. Ynsa
Abstract:
Boron is the most effective dopant element in diamond and the capability to introduce high densities of boron makes ion implantation a potential key technology to verify superconductivity in diamond. However, its optimization involves many experimental parameters (i.e. ion energy, fluence, current, annealing times and temperature) and the effectiveness of B implantation to induce superconductivity in diamond is still to be demonstrated. So far, a limited number of works in the range of high (i.e. textgreater5 MeV) B ion energies have been carried, despite the promising perspective offered by deep implantation to fabricate sub-superficial superconductive structures in diamond. To this scope, in the present work, we report on the study of the structural effects of high-energy boron ion irradiation on diamond. Monocrystalline diamond sample was irradiated with an 8 MeV 11B microbeam across multiple square areas, characterized by a different combination of fluences and ion currents. After the implantation, the sample was characterized by Raman spectroscopy and Atomic Force Microscopy to assess its structural modifications and the related surface swelling. Significant variations related to the irradiation condition have been determined.
Reference:
P. Aprà, J. Ripoll-Sau, J. Manzano-Santamaría, C. Munuera, J. Forneris, S. Ditalia Tchernij, P. Olivero, F. Picollo, E. Vittone and M. D. Ynsa, “Structural characterization of 8 MeV 11B implanted diamond”, Diamond and Related Materials, vol. 104, pp. 107770.
Bibtex Entry:
@article{apra_structural_2020,
title = {Structural characterization of 8 {MeV} {11B} implanted diamond},
volume = {104},
issn = {0925-9635},
url = {http://www.sciencedirect.com/science/article/pii/S0925963519308751},
doi = {10.1016/j.diamond.2020.107770},
abstract = {Boron is the most effective dopant element in diamond and the capability to introduce high densities of boron makes ion implantation a potential key technology to verify superconductivity in diamond. However, its optimization involves many experimental parameters (i.e. ion energy, fluence, current, annealing times and temperature) and the effectiveness of B implantation to induce superconductivity in diamond is still to be demonstrated. So far, a limited number of works in the range of high (i.e. {textgreater}5 MeV) B ion energies have been carried, despite the promising perspective offered by deep implantation to fabricate sub-superficial superconductive structures in diamond. To this scope, in the present work, we report on the study of the structural effects of high-energy boron ion irradiation on diamond. Monocrystalline diamond sample was irradiated with an 8 MeV 11B microbeam across multiple square areas, characterized by a different combination of fluences and ion currents. After the implantation, the sample was characterized by Raman spectroscopy and Atomic Force Microscopy to assess its structural modifications and the related surface swelling. Significant variations related to the irradiation condition have been determined.},
language = {en},
urldate = {2020-03-31},
journal = {Diamond and Related Materials},
author = {Aprà, P. and Ripoll-Sau, J. and Manzano-Santamaría, J. and Munuera, C. and Forneris, J. and Ditalia Tchernij, S. and Olivero, P. and Picollo, F. and Vittone, E. and Ynsa, M. D.},
month = apr,
year = {2020},
pages = {107770},
file = {ScienceDirect Full Text PDF:E:\Usuarios\Administrator\Zotero\storage\56IQALLE\Aprà et al. - 2020 - Structural characterization of 8 MeV 11B implanted.pdf:application/pdf;ScienceDirect Snapshot:E:\Usuarios\Administrator\Zotero\storage\HKY6YSNP\S0925963519308751.html:text/html},
}