Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors

by Redondo-Cubero A., Gago R., Romero M.F., Muñoz-Martín A., Braña A.F. and Muñoz E.

Reference:

Redondo-Cubero A., Gago R., Romero M.F., Muñoz-Martín A., Braña A.F. and Muñoz E., “Study of a-SiN:H passivant layers for GaN-based high electron mobility transistors”, Poster contribution, E-MRS 2007 Spring Meeting, Strasbourg, France.

Bibtex Entry:

@misc{a_study_2007,
	address = {E-MRS 2007 Spring Meeting, Strasbourg, France},
	type = {Poster contribution},
	title = {Study of a-{SiN}:{H} passivant layers for {GaN}-based high electron mobility transistors},
	author = {A., , Redondo-Cubero and R., , Gago and M.F., , Romero and A., , Muñoz-Martín and A.F., , Braña and E., , Muñoz},
	month = jun,
	year = {2007},
}