Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis

by Redondo-Cubero A., Pereiro J., Grandal J., Lorenz K., Franco N., R. and Muñoz E. Gago and J.A. and Calleja E. Sánchez-García

Reference:

Redondo-Cubero A., Pereiro J., Grandal J., Lorenz K., Franco N., R. and Muñoz E. Gago and J.A. and Calleja E. Sánchez-García, “Structural study of the epitaxial growth in InGaN/GaN heterostructures by ion beam analysis”, Oral Contribution, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, Málaga, Spain.

Bibtex Entry:

@misc{a_structural_2009,
	address = {33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, Málaga, Spain},
	type = {Oral {Contribution}},
	title = {Structural study of the epitaxial growth in {InGaN}/{GaN} heterostructures by ion beam analysis},
	shorttitle = {({WOCSDICE} 2009)},
	author = {A., , Redondo-Cubero and J., , Pereiro and J., , Grandal and K., , Lorenz and N., , Franco and {Gago, R.} and {Muñoz, E.} and {Sánchez-García, J.A.} and {Calleja, E.} and {Alves, E.}},
	month = may,
	year = {2009},
}