New Thesis at CMAM about "Structural and compositional characterization of wide bandgap semiconductor heterostructures by ion beam analysis".

Andres Redondo defending his thesis

Defended by Andrés Redondo Cubero at the auditorium of the ICMM-CSIC.

Summary: This thesis addresses the application of ion beam analysis to the study of several wide bandgap semiconductor heterostructures. This work is motivated by the need of improving the epitaxial growth of the active and base layers composing high electron mobility transistors (HEMTs) and high-power optoelectronic devices, mainly based on GaN and ZnO. At the same time, this thesis explores the advantages and limits of ion beam techniques for the structural and compositional characterization of such heterostructures, as an alternative and complement to X-ray diffraction methods. For more information about this, download the thesis from here »